Manufacturer | Part # | Datasheet | Description |
Pepperl+Fuchs Inc. |
IPT1-FP
|
481Kb/2P
|
Read/write head
|
Search Partnumber :
Start with "IPT1-" -
Total : 59 ( 1/3 Page) |
Pepperl+Fuchs Inc. |
IPT1-FP
|
481Kb/2P |
Read/write head
|
Infineon Technologies A... |
IPT111N20NFD
|
1,010Kb/10P |
OptiMOS짧3 Power-Transistor, 200 V
Rev.2.1,2016-02-23 |
IP SEMICONDUCTOR CO., L... |
IPT1206-BEA
|
226Kb/4P |
High current density due to double mesa technology
|
IPT1206-BEB
|
226Kb/4P |
High current density due to double mesa technology
|
IPT1206-BEF
|
237Kb/4P |
High current density due to double mesa technology
|
IPT1206-CEA
|
226Kb/4P |
High current density due to double mesa technology
|
IPT1206-CEB
|
226Kb/4P |
High current density due to double mesa technology
|
IPT1206-CEF
|
237Kb/4P |
High current density due to double mesa technology
|
IPT1206-SEA
|
226Kb/4P |
High current density due to double mesa technology
|
IPT1206-SEB
|
226Kb/4P |
High current density due to double mesa technology
|
IPT1206-SEF
|
237Kb/4P |
High current density due to double mesa technology
|
IPT1206-TEA
|
226Kb/4P |
High current density due to double mesa technology
|
IPT1206-TEB
|
226Kb/4P |
High current density due to double mesa technology
|
IPT1206-TEF
|
237Kb/4P |
High current density due to double mesa technology
|
IPT1208-BEA
|
226Kb/4P |
High current density due to double mesa technology
|
IPT1208-BEB
|
225Kb/4P |
High current density due to double mesa technology
|
IPT1208-BEF
|
234Kb/4P |
High current density due to double mesa technology
|
IPT1208-CEA
|
226Kb/4P |
High current density due to double mesa technology
|
IPT1208-CEB
|
225Kb/4P |
High current density due to double mesa technology
|