Manufacturer | Part # | Datasheet | Description |
NXP Semiconductors |
GQM2195C2ER20BB12D
|
379Kb/9P
|
RF Power GaN Transistor
|
Murata Manufacturing Co... |
GQM2195C2ER30BB12D
|
42Kb/4P
|
Chip Monolithic Ceramic Capacitors
|
NXP Semiconductors |
GQM2195C2ER30BB12D
|
346Kb/9P
|
RF Power GaN Transistor
Rev. 1, 01/2021
|
GQM2195C2ER30BB12D
|
379Kb/9P
|
RF Power GaN Transistor
|
GQM2195C2ER50BB12D
|
346Kb/9P
|
RF Power GaN Transistor
Rev. 1, 01/2021
|
GQM2195C2ER50BB12D
|
379Kb/9P
|
RF Power GaN Transistor
|
GQM2195C2ER50BB12D
|
805Kb/23P
|
N--Channel Enhancement--Mode Lateral MOSFET
Rev. 2, 10/2021
|
Murata Manufacturing Co... |
GQM2195C2ER50CB12
|
758Kb/27P
|
High Q and High Power Chip Multilayer Ceramic Capacitors for General Purpose
|
NXP Semiconductors |
GQM2195C2ER60BB12
|
414Kb/18P
|
1805–2200 MHz, 107 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR
Rev. 1, 08/2020
|
GQM2195C2ER60BB12D
|
346Kb/9P
|
RF Power GaN Transistor
Rev. 1, 01/2021
|
GQM2195C2ER60BB12D
|
379Kb/9P
|
RF Power GaN Transistor
|
Murata Manufacturing Co... |
GQM2195C2ER75CB12
|
758Kb/27P
|
High Q and High Power Chip Multilayer Ceramic Capacitors for General Purpose
|
NXP Semiconductors |
GQM2195C2ER80BB12
|
414Kb/18P
|
1805–2200 MHz, 107 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR
Rev. 1, 08/2020
|
GQM2195C2ER80BB12D
|
379Kb/9P
|
RF Power GaN Transistor
|
GQM2195C2ER90BB12
|
414Kb/18P
|
1805–2200 MHz, 107 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR
Rev. 1, 08/2020
|