Manufacturer | Part # | Datasheet | Description |
Unisonic Technologies |
F2N60
|
229Kb/6P
|
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
Jiangsu Donghai Semicon... |
F2N60
|
1Mb/13P
|
2A 600V N-channel Enhancement Mode Power MOSFET
|
F2N60
|
1Mb/13P
|
2A 600V N-channel Enhancement Mode Power MOSFET
|
F2N60
|
1Mb/13P
|
2A 600V N-channel Enhancement Mode Power MOSFET
|
F2N60
|
1Mb/13P
|
2A 600V N-channel Enhancement Mode Power MOSFET
|
F2N60
|
1Mb/13P
|
2A 600V N-channel Enhancement Mode Power MOSFET
|
F2N60
|
1Mb/13P
|
2A 600V N-channel Enhancement Mode Power MOSFET
|
Unisonic Technologies |
F2N60G-TN3-R
|
229Kb/6P
|
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
F2N60G-TN3-T
|
229Kb/6P
|
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
F2N60L-TN3-R
|
229Kb/6P
|
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
F2N60L-TN3-T
|
229Kb/6P
|
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
Jiangsu Donghai Semicon... |
F2N65
|
1Mb/12P
|
2A 650V N-channel Enhancement Mode Power MOSFET
|
F2N65
|
1Mb/12P
|
2A 650V N-channel Enhancement Mode Power MOSFET
|
F2N65
|
1Mb/12P
|
2A 650V N-channel Enhancement Mode Power MOSFET
|
F2N65
|
1Mb/12P
|
2A 650V N-channel Enhancement Mode Power MOSFET
|
F2N65
|
1Mb/12P
|
2A 650V N-channel Enhancement Mode Power MOSFET
|