Manufacturer | Part # | Datasheet | Description |
IXYS Corporation |
60N60
|
67Kb/2P
|
Ultra-Low VCE(sat) IGBT
|
60N60
|
156Kb/5P
|
HiPerFASTTM IGBTs with Diode
|
60N60
|
156Kb/5P
|
HiPerFASTTM IGBTs with Diode
|
60N60B2
|
514Kb/6P
|
B2-Class High Speed IGBTs (Electrically Isolated Back Surface)
|
60N60B2D1
|
514Kb/6P
|
B2-Class High Speed IGBTs (Electrically Isolated Back Surface)
|
Silan Microelectronics ... |
60N60FD1
|
307Kb/10P
|
60A, 600V FIELD STOP IGBT
Rev.:1.7
|
Fairchild Semiconductor |
60N60SFD
|
418Kb/9P
|
600 V, 60 A Field Stop IGBT
Rev. 1.4 March 2015
|
Search Partnumber :
Start with "60N6" -
Total : 85 ( 1/5 Page) |
IXYS Corporation |
60N60
|
156Kb/5P |
HiPerFASTTM IGBTs with Diode
|
60N60
|
67Kb/2P |
Ultra-Low VCE(sat) IGBT
|
60N60
|
156Kb/5P |
HiPerFASTTM IGBTs with Diode
|
60N60B2
|
514Kb/6P |
B2-Class High Speed IGBTs (Electrically Isolated Back Surface)
|
60N60B2D1
|
514Kb/6P |
B2-Class High Speed IGBTs (Electrically Isolated Back Surface)
|
Silan Microelectronics ... |
60N60FD1
|
307Kb/10P |
60A, 600V FIELD STOP IGBT
Rev.:1.7 |
Fairchild Semiconductor |
60N60SFD
|
418Kb/9P |
600 V, 60 A Field Stop IGBT
Rev. 1.4 March 2015 |
VBsemi Electronics Co.,... |
60N02
|
1,017Kb/8P |
N-Channel 30-V (D-S) MOSFET
|
60N03
|
1,017Kb/8P |
N-Channel 30-V (D-S) MOSFET
|
60N03.
|
1Mb/7P |
N-Channel 30-V (D-S) MOSFET
|
List of Unclassifed Man... |
60N035
|
127Kb/2P |
N-Channel Field Effect Transistor
|
VBsemi Electronics Co.,... |
60N03F
|
1,017Kb/8P |
N-Channel 30-V (D-S) MOSFET
|
60N03GH
|
1,017Kb/8P |
N-Channel 30-V (D-S) MOSFET
|