Manufacturer | Part # | Datasheet | Description |
Sanyo Semicon Device |
2SJ230
|
79Kb/3P
|
Very High-Speed Switching Applications
|
2SJ231
|
77Kb/3P
|
Very High-Speed Switching Applications
|
2SJ232
|
79Kb/3P
|
Very High-Speed Switching Applications
|
2SJ232
|
91Kb/4P
|
Ultrahigh-Speed Switching Applications
|
2SJ233
|
79Kb/3P
|
Very High-Speed Switching Applications
|
Toshiba Semiconductor |
2SJ238
|
350Kb/5P
|
Field Effect Transistor Silicon P Channel MOS Type (L2--MOS IV) High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications
|
Search Partnumber :
Start with "2SJ23" -
Total : 106 ( 1/6 Page) |
Sanyo Semicon Device |
2SJ230
|
79Kb/3P |
Very High-Speed Switching Applications
|
2SJ231
|
77Kb/3P |
Very High-Speed Switching Applications
|
2SJ232
|
79Kb/3P |
Very High-Speed Switching Applications
|
2SJ232
|
91Kb/4P |
Ultrahigh-Speed Switching Applications
|
2SJ233
|
79Kb/3P |
Very High-Speed Switching Applications
|
Toshiba Semiconductor |
2SJ238
|
350Kb/5P |
Field Effect Transistor Silicon P Channel MOS Type (L2--MOS IV) High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications
|
2SJ200
|
181Kb/3P |
P CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATION)
|
2SJ200
|
426Kb/5P |
High Power Amplifier Application
|
2SJ200
|
297Kb/5P |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
2SJ200
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
2SJ200-Y
|
297Kb/5P |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
2SJ200
|
426Kb/5P |
High Power Amplifier Application
|
2SJ201
|
182Kb/3P |
P CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS)
|
2SJ201
|
448Kb/5P |
High-Power Amplifier Application
|