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K9F1208D0B Datasheet (PDF) - Samsung semiconductor

K9F1208D0B Datasheet PDF - Samsung semiconductor
Part # K9F1208D0B
Download  K9F1208D0B Download

File Size   767.01 Kbytes
Page   45 Pages
Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
Description 64M x 8 Bit NAND Flash Memory

K9F1208D0B Datasheet (PDF)

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K9F1208D0B Datasheet PDF - Samsung semiconductor

Part # K9F1208D0B
Download  K9F1208D0B Click to download

File Size   767.01 Kbytes
Page   45 Pages
Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
Description 64M x 8 Bit NAND Flash Memory

K9F1208D0B Datasheet (HTML) - Samsung semiconductor

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K9F1208D0B Product details

GENERAL DESCRIPTION
Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on the 528-byte page and an erase operation can be performed in typical 2ms on a 16K-byte block. Data in the page can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F1208X0B¢s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1208X0B is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

FEATURES
• Voltage Supply
   - 1.8V device(K9F1208Q0B) : 1.70~1.95V
   - 2.65V device(K9F1208D0B) : 2.4~2.9V
   - 3.3V device(K9F1208U0B) : 2.7 ~ 3.6 V
• Organization
   - Memory Cell Array : (64M + 2048K)bit x 8 bit
   - Data Register : (512 + 16)bit x 8bit
• Automatic Program and Erase
   - Page Program : (512 + 16)Byte
   - Block Erase : (16K + 512)Byte
• Page Read Operation
   - Page Size : (512 + 16)Byte
   - Random Access : 15ms(Max.)
   - Serial Page Access : 50ns(Min.)
• Fast Write Cycle Time
   - Program time : 200ms(Typ.)
   - Block Erase Time : 2ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
   - Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating-Gate Technology
   - Endurance : 100K Program/Erase Cycles
   - Data Retention : 10 Years
• Command Register Operation
• Intelligent Copy-Back
• Unique ID for Copyright Protection
• Package
   - K9F1208X0B-YCB0/YIB0
      48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
   - K9F1208X0B-GCB0/GIB0
      63- Ball FBGA (8.5 x 13 , 1.0 mm width)
   - K9F1208U0B-VCB0/VIB0
      48 - Pin WSOP I (12X17X0.7mm)
   - K9F1208X0B-PCB0/PIB0
      48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package
   - K9F1208X0B-JCB0/JIB0
      63- Ball FBGA - Pb-free Package
   - K9F1208U0B-FCB0/FIB0
      48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package
   * K9F1208U0B-V,F(WSOPI ) is the same device as K9F1208U0B-Y,P(TSOP1) except package type.




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