VI30120C Datasheet(PDF) - Vishay Siliconix

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VI30120C Datasheet (PDF) - Vishay Siliconix

VI30120C Datasheet PDF - Vishay Siliconix


Part #	VI30120C

Download	VI30120C Download

File Size	158.28 Kbytes

Page	5 Pages

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

Logo

Description

Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

VI30120C Datasheet (PDF)

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VI30120C Datasheet PDF - Vishay Siliconix


Part #	VI30120C

Download	VI30120C Click to download

File Size	158.28 Kbytes

Page	5 Pages

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

Logo

Description	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

VI30120C Datasheet (HTML) - Vishay Siliconix

VI30120C Product details

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified

Similar Part No. - VI30120C

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	VI30120C	168Kb / 5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A Revision: 19-May-08
	VI30120C	142Kb / 5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 23-Mar-11
	VI30120C	132Kb / 5P	Dual High Voltage Trench MOS Barrier Schottky Rectifier Revision: 16-Aug-13
	VI30120C	141Kb / 5P	Dual High Voltage Trench MOS Barrier Schottky Rectifier 01-Jan-2022
	VI30120C-E3	157Kb / 6P	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A Revision: 12-Dec-16

Similar Description - VI30120C

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	V20100C-E3	167Kb / 6P	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A Revision: 13-Dec-16
	VB20100C-M3	100Kb / 5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A Revision: 03-Jan-17
	VT2060G-E3	156Kb / 6P	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A Revision: 15-Dec-16
	VB60170G-E3	95Kb / 4P	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A Revision: 11-Sep-13
	V30120C-E3	157Kb / 6P	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A Revision: 12-Dec-16
	V20100C	167Kb / 5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A Revision: 31-Jul-08
	V30120C	168Kb / 5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A Revision: 19-May-08
	V20100SG	159Kb / 5P	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A Revision: 31-Jul-08
	V20120S	166Kb / 5P	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A Revision: 19-May-08
	V20100SG	160Kb / 5P	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A Revision: 19-Oct-07

About Vishay Siliconix

Vishay Siliconix is a subsidiary of Vishay Intertechnology, a global manufacturer of passive electronic components.
Vishay Siliconix specializes in the design, manufacturing, and marketing of power MOSFETs, IGBTs, and other power semiconductors.
The company was founded in 1962 and is headquartered in Santa Clara, California.
Vishay Siliconix provides power solutions for a variety of applications, including renewable energy systems, industrial equipment, computing and telecommunications, and automotive electronics.
The company's products are designed for high efficiency, low power consumption, and high reliability, and are manufactured in state-of-the-art facilities using advanced fabrication processes.
With a focus on innovation and customer satisfaction, Vishay Siliconix is committed to providing its customers with the best power management solutions to meet their needs.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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