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IRGPH20S Datasheet (PDF) - International Rectifier
IRGPH20S Datasheet PDF - International Rectifier
Part # IRGPH20S
Download  IRGPH20S Download

File Size   240.26 Kbytes
Page   6 Pages
Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=6.6A)

IRGPH20S Datasheet (PDF)

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IRGPH20S Datasheet PDF - International Rectifier

Part # IRGPH20S
Download  IRGPH20S Click to download

File Size   240.26 Kbytes
Page   6 Pages
Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=6.6A)

IRGPH20S Datasheet (HTML) - International Rectifier

IRGPH20S Datasheet HTML 1Page - International Rectifier IRGPH20S Datasheet HTML 2Page - International Rectifier IRGPH20S Datasheet HTML 3Page - International Rectifier IRGPH20S Datasheet HTML 4Page - International Rectifier IRGPH20S Datasheet HTML 5Page - International Rectifier IRGPH20S Datasheet HTML 6Page - International Rectifier

IRGPH20S Product details

Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications.

Features
• Switching-loss rating includes all "tail" losses
• Optimized for line frequency operation (to 400Hz) See Fig. 1 for Current vs. Frequency curve




Similar Part No. - IRGPH20S

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International Rectifier		 IRGPH20S IRF-IRGPH20S Datasheet
98Kb / 35P		    Fit Rate / Equivalent Device Hours
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Similar Description - IRGPH20S

ManufacturerPart #DatasheetDescription
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International Rectifier		 IRGPH40M IRF-IRGPH40M Datasheet
84Kb / 2P		    INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=18A)
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IRGPH40F IRF-IRGPH40F Datasheet
255Kb / 6P		    INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=17A)
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267Kb / 6P		    INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=25A)
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IRGPH20M IRF-IRGPH20M Datasheet
240Kb / 6P		    INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=4.5A)
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274Kb / 7P		    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=10A)
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About International Rectifier

International Rectifier (IR) was an American company that specialized in the design and manufacture of power management and power control semiconductors.
The company was founded in 1947 and was headquartered in El Segundo, California.
IR provided a wide range of products including power management ICs, power MOSFETs, IGBTs, and other power control products.
The company's products were used in various applications such as computing, telecommunications, and industrial automation.
IR was known for its expertise in power management and control technology and its ability to deliver high-quality and reliable products to its customers.
In 2014, IR was acquired by Infineon Technologies, a leading provider of power management and control products and other semiconductor solutions.
The International Rectifier brand is no longer in use, but its technology and products continue to be a part of Infineon's portfolio.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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