HGTG30N60B3D Datasheet(PDF) - Intersil Corporation

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HGTG30N60B3D Datasheet (PDF) - Intersil Corporation

HGTG30N60B3D Datasheet PDF - Intersil Corporation


Part #	HGTG30N60B3D

Download	HGTG30N60B3D Download

File Size	109.09 Kbytes

Page	7 Pages

Manufacturer	INTERSIL [Intersil Corporation]

Direct Link	http://www.intersil.com/cda/home

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Description

60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

HGTG30N60B3D Datasheet (PDF)

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HGTG30N60B3D Datasheet PDF - Intersil Corporation


Part #	HGTG30N60B3D

Download	HGTG30N60B3D Click to download

File Size	109.09 Kbytes

Page	7 Pages

Manufacturer	INTERSIL [Intersil Corporation]

Direct Link	http://www.intersil.com/cda/home

Logo

Description	60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

HGTG30N60B3D Datasheet (HTML) - Intersil Corporation

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HGTG30N60B3D Product details

The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49170. The diode used in anti-parallel with the IGBT is the development type TA49053.

Features
• 60A, 600V, TC = 25°C
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at TJ = 150°C
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode

Similar Part No. - HGTG30N60B3D

Manufacturer	Part #	Datasheet	Description
Fairchild Semiconductor	HGTG30N60B3D	214Kb / 8P	60A, 600V, UFS Series N-Channel IGBT
	HGTG30N60B3D	228Kb / 8P	60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
	HGTG30N60B3D	228Kb / 8P	60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

Similar Description - HGTG30N60B3D

Manufacturer	Part #	Datasheet	Description
Fairchild Semiconductor	HGTG30N60B3D	228Kb / 8P	60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Intersil Corporation	HGTG12N60C3D	98Kb / 7P	24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 2000
Harris Corporation	HGTP3N60C3D	394Kb / 11P	6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Intersil Corporation	HGTG20N60B3D	135Kb / 6P	40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 2000
Fairchild Semiconductor	HGTG20N60C3D	123Kb / 8P	45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Intersil Corporation	HGTG20N60C3D	82Kb / 7P	45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 2000
Intersil Corporation	HGTP3N60B3D	154Kb / 7P	7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 2000
Harris Corporation	HGTG12N60C3D	102Kb / 7P	24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Fairchild Semiconductor	HGTG20N60B3D	179Kb / 7P	40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Harris Corporation	HGTG30N60C3D	131Kb / 8P	63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

About Intersil Corporation

Intersil Corporation was an American semiconductor company that specialized in the design and manufacture of high-performance analog and mixed-signal integrated circuits.
The company was founded in 1967 and was known for its expertise in power management, data conversion, and radio frequency (RF) technologies.
Intersil's products were used in a wide range of applications such as consumer electronics, industrial, telecommunications, and aerospace and defense.
In 2016, Intersil was acquired by Renesas Electronics Corporation, a Japanese semiconductor company.
The Intersil brand and technology continue to be developed and sold as part of Renesas' portfolio of products.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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