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N25Q512A83GSF40G Datasheet (PDF) - Micron Technology

N25Q512A83GSF40G Datasheet PDF - Micron Technology
Part # N25Q512A83GSF40G
Download  N25Q512A83GSF40G Download

File Size   1214.25 Kbytes
Page   91 Pages
Manufacturer  MICRON [Micron Technology]
Direct Link  http://www.micron.com
Logo MICRON - Micron Technology
Description Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q512A

N25Q512A83GSF40G Datasheet (PDF)

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N25Q512A83GSF40G Datasheet PDF - Micron Technology

Part # N25Q512A83GSF40G
Download  N25Q512A83GSF40G Click to download

File Size   1214.25 Kbytes
Page   91 Pages
Manufacturer  MICRON [Micron Technology]
Direct Link  http://www.micron.com
Logo MICRON - Micron Technology
Description Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q512A

N25Q512A83GSF40G Datasheet (HTML) - Micron Technology


N25Q512A83GSF40G Product details

Features

• Stacked device (two 256Mb die)

• SPI-compatible serial bus interface

• Double transfer rate (DTR) mode

• 2.7–3.6V single supply voltage

• 108 MHz (MAX) clock frequency supported for all protocols in single transfer rate (STR) mode

• 54 MHz (MAX) clock frequency supported for all protocols in DTR mode

• Dual/quad I/O instruction provides increased throughput up to 54 MB/s

• Supported protocols

  – Extended SPI, dual I/O, and quad I/O

  – DTR mode supported on all

• Execute-in-place (XIP) mode for all three protocols

  – Configurable via volatile or nonvolatile registers

  – Enables memory to work in XIP mode directly after power-on

• PROGRAM/ERASE SUSPEND operations

• Available protocols

  – Available READ operations

  – Quad or dual output fast read

  – Quad or dual I/O fast read

• Flexible to fit application

  – Configurable number of dummy cycles

  – Output buffer configurable

• Software reset

• Additional reset pin for selected part numbers 1

• 3-byte and 4-byte addressability mode supported

• 64-byte, user-lockable, one-time programmable (OTP) dedicated area

• Erase capability

  – Subsector erase 4KB uniform granularity blocks

  – Sector erase 64KB uniform granularity blocks

  – Single die erase

• Write protection

  – Software write protection applicable to every 64KB sector via volatile lock bit

  – Hardware write protection: protected area size defined by five nonvolatile bits (BP0, BP1, BP2,BP3, and TB)

  – Additional smart protections, available upon request

• Electronic signature

– JEDEC-standard 2-byte signature (BA20h)

– Unique ID code (UID): 17 read-only bytes, including: Two additional extended device ID bytes to identify device factory options; and customized factory data (14 bytes)

• Minimum 100,000 ERASE cycles per sector

• More than 20 years data retention

• Packages – JEDEC-standard, all RoHS-compliant

– V-PDFN-8/8mm x 6mm (also known as SON, DFPN, MLP, MLF)

– SOP2-16/300mils (also known as SO16W, SO16-Wide, SOIC-16)

– T-PBGA-24b05/6mm x 8mm (also known as TBGA24)




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