Manufacturer | Part # | Datasheet | Description |
List of Unclassifed Man... |
ITR9909
|
525Kb / 9P |
An infrared Emitting Diode and an NPN silicon phototransistor
|
Toshiba Semiconductor |
TLP595G
|
318Kb / 8P |
The Toshiba TLP595G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET
|
List of Unclassifed Man... |
ITR20002
|
502Kb / 9P |
infrared emitting diode and an NPN silicon phototransistor
|
Toshiba Semiconductor |
TLP4592G
|
217Kb / 6P |
The Toshiba TLP4592G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a DIP package.
|
Leshan Radio Company |
L2SC3356RWT1G
|
653Kb / 4P |
The L2SC3356RWT1G is an NPN silicon epitaxial transistor
|
CITIZEN ELECTRONICS CO.... |
CL-L102
|
189Kb / 3P |
The light-emitting element of an LED radiates light and heat according to the input power.
|
TT Electronics. |
OPI150
|
300Kb / 4P |
Optically Coupled Isolator / High Speed Optically Coupled Isolator
|
Leshan Radio Company |
L2SC3356RLT1G
|
644Kb / 4P |
The L2SC3356RLT1 is an NPN silicon epitaxial transistor designed for
|
California Eastern Labs |
PS9121
|
287Kb / 15P |
The PS9121 is an optically coupled high-speed, active low type isolator containing a GaAlAs LED on the input side
|
List of Unclassifed Man... |
TLP580
|
332Kb / 3P |
GaAIAs INFRARED EMITTING DIODE AND NPN SILICON PHOTO-TRANSISTOR
|