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PTF080101M Datasheet (PDF) - Infineon Technologies AG

PTF080101M Datasheet PDF - Infineon Technologies AG
Part # PTF080101M
Download  PTF080101M Download

File Size   258.49 Kbytes
Page   8 Pages
Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG
Description High Power RF LDMOS Field Effect Transistor 10 W, 450 ??960 MHz

PTF080101M Datasheet (PDF)

Go To PDF Page Download Datasheet
PTF080101M Datasheet PDF - Infineon Technologies AG

Part # PTF080101M
Download  PTF080101M Click to download

File Size   258.49 Kbytes
Page   8 Pages
Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG
Description High Power RF LDMOS Field Effect Transistor 10 W, 450 ??960 MHz

PTF080101M Datasheet (HTML) - Infineon Technologies AG

PTF080101M Datasheet HTML 1Page - Infineon Technologies AG PTF080101M Datasheet HTML 2Page - Infineon Technologies AG PTF080101M Datasheet HTML 3Page - Infineon Technologies AG PTF080101M Datasheet HTML 4Page - Infineon Technologies AG PTF080101M Datasheet HTML 5Page - Infineon Technologies AG PTF080101M Datasheet HTML 6Page - Infineon Technologies AG PTF080101M Datasheet HTML 7Page - Infineon Technologies AG PTF080101M Datasheet HTML 8Page - Infineon Technologies AG

PTF080101M Product details

Description
The PTF080101M is an unmatched 10-watt GOLDMOS® FETintended for class AB base station applications in the 450 MHz to 960 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small footprint.

Features
• Typical EDGE performance
  - Average output power = 5.0 W
  - Gain = 19 dB
  - Efficiency = 37%
  - EVM = 2.0%
• Typical CW performance
  - Output Power at P–1dB = 12.5 W
  - Gain = 18 dB
  - Efficiency = 50%
• Integrated ESD protection: Human Body Model Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V, 10 W (CW) output power
• Pb-free and RoHS compliant




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About Infineon Technologies AG


Infineon Technologies is a leading global semiconductor manufacturer that specializes in providing power management, security, and control solutions for a variety of industries such as automotive, industrial, and communication systems.
The company was founded in 1999 and is headquartered in Neubiberg, Germany.
Infineon offers a wide range of products including microcontrollers, power semiconductors, sensors, and other integrated circuits.
The company has a strong presence in the global market, with operations and facilities in various countries across the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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