Manufacturer | Part # | Datasheet | Description |
Toshiba Semiconductor |
DSF05S30U
|
183Kb / 3P |
Diode Silicon Epitaxial Schottky Barrier Type
|
DSR07S30U
|
188Kb / 3P |
Diode Silicon Epitaxial Schottky Barrier Type
|
DSR05S30CTB
|
179Kb / 3P |
Diode Silicon Epitaxial Schottky Barrier Type
|
DSF05S30CTB
|
178Kb / 3P |
Diode Silicon Epitaxial Schottky Barrier Type
|
JDH2S01T
|
70Kb / 2P |
Diode Silicon Epitaxial Schottky Barrier Type
|
DSR05S30U
|
184Kb / 3P |
Diode Silicon Epitaxial Schottky Barrier Type
|
KEC(Korea Electronics) |
KDR322
|
351Kb / 2P |
SILICON EPITAXIAL SCHOTTKY BARRIER TYPE DIODE
|
Toshiba Semiconductor |
1SS383
|
283Kb / 3P |
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
|
1SS385FV
|
238Kb / 3P |
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
|
1SS389
|
212Kb / 3P |
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
|