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    EIA1114-2 - 11.0-14.0GHz 2-Watt Internally Matched Power FET - Excelics Semiconductor, Inc.

Page

Part No. EIA1114-2
Description  11.0-14.0GHz 2-Watt Internally Matched Power FET
Download  EIA1114-2 Click to view
File Size   86.3 Kbytes / 1 Pages
Maker  EXCELICS [Excelics Semiconductor, Inc.]
Homepage  http://www.excelics.com/
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Related Electronics Part Number

Part NumberComponents DescriptionHtml ViewManufacturer
RJK6014DPPSilicon N Channel MOS FET High Speed Power Switching 1 2 3 4 Renesas Technology Corp
EIA1111-211.0-11.5 GHz 2-Watt Internally Matched Power FET 1 Excelics Semiconductor, Inc.
EIA1111-611.0-11.5 GHz 6-Watt Internally Matched Power FET 1 Excelics Semiconductor, Inc.
MGFS45V2527A2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET 1 2 3 Mitsubishi Electric Semiconductor
MGFC39V6472A_046.4 ~ 7.2GHz BAND 8W INTERNALLY MATCHED GaAs FET 1 2 Mitsubishi Electric Semiconductor
MGFC42V6472A6.4 - 7.2GHz BAND 16W INTERNALLY MATCHED GaAs FET 1 2 3 Mitsubishi Electric Semiconductor
MGFC47A44504.4~5.0GHz BAND 50W INTERNALLY MATCHED GaAs FET 1 2 3 4 5 Mitsubishi Electric Semiconductor
MGFC36V3436_043.4 ~ 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET 1 2 Mitsubishi Electric Semiconductor
MGFC39V7177A_047.1 ~ 7.7GHz BAND 8W INTERNALLY MATCHED GaAs FET 1 2 Mitsubishi Electric Semiconductor
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  EIA1114-2 Datasheet   EIA1114-2 Cross Reference   EIA1114-2 Schematic   EIA1114-2 Distributor   EIA1114-2 Datenblatt   EIA1114-2 RoHS
  EIA1114-2 Equivalent   EIA1114-2 Application Notes   EIA1114-2 Data Sheet   EIA1114-2 component   EIA1114-2 Fiche Technique   EIA1114-2 Circuit

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