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MT48H16M16LFB5-8LITG Datasheet (PDF) - Micron Technology

MT48H16M16LFB5-8LITG Datasheet PDF - Micron Technology
Part # MT48H16M16LFB5-8LITG
Download  MT48H16M16LFB5-8LITG Download

File Size   1812.0 Kbytes
Page   71 Pages
Manufacturer  MICRON [Micron Technology]
Direct Link  http://www.micron.com
Logo MICRON - Micron Technology
Description 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

MT48H16M16LFB5-8LITG Datasheet (PDF)

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MT48H16M16LFB5-8LITG Datasheet PDF - Micron Technology

Part # MT48H16M16LFB5-8LITG
Download  MT48H16M16LFB5-8LITG Click to download

File Size   1812.0 Kbytes
Page   71 Pages
Manufacturer  MICRON [Micron Technology]
Direct Link  http://www.micron.com
Logo MICRON - Micron Technology
Description 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

MT48H16M16LFB5-8LITG Datasheet (HTML) - Micron Technology

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MT48H16M16LFB5-8LITG Product details

General Description

The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x16’s 67,108,864-bit banks is organized as 8,192 rows by 512 columns by 16 bits. Each of the x32’s 67,108,864-bit banks is organized as 4,096 rows by 512 columns by 32 bits.



Features

• Fully synchronous; all signals registered on positive edge of system clock

• VDD/VDDQ = 1.70–1.95V

• Internal, pipelined operation; column address can be changed every clock cycle

• Four internal banks for concurrent operation

• Programmable burst lengths: 1, 2, 4, 8, or continuous page1

• Auto precharge, includes concurrent auto precharge

• Auto refresh and self refresh modes

• LVTTL-compatible inputs and outputs

• On-chip temperature sensor to control refresh rate

• Partial-array self refresh (PASR)

• Deep power-down (DPD)

• Selectable output drive (DS)

• 64ms refresh period (8,192 rows)



 




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