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    NX6306 - 1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s and 622 Mb/s APPLICATIONS - California Eastern Labs

Page
Part No. NX6306
Description  1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s and 622 Mb/s APPLICATIONS
Download  NX6306 Click to view
File Size   388.69 Kbytes / 5 Pages
Maker  CEL [California Eastern Labs]
Homepage  http://www.cel.com/
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Related Electronics Part Number

Part NumberComponents DescriptionHtml ViewManufacturer
NX63011310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS 1 2 3 4 California Eastern Labs
NX53111310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 1.25 Gb/s AND FTTH PON APPLICATIONS 1 2 3 4 California Eastern Labs
NX53131310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS 1 2 3 4 California Eastern Labs
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NX5310_061 310 nm FOR 156 Mb/s 622 Mb/s 1.25 Gb/s FTTH InGaAsP MQW-FP LASER DIODE 1 2 3 4 5 MoreCalifornia Eastern Labs
NX5312_061 310 nm FOR 156 Mb/s 622 Mb/s 1.25 Gb/s InGaAsP MQW-FP LASER DIODE 1 2 3 4 5 MoreCalifornia Eastern Labs
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