General Description
This P-Channel –1.8V specified MOSFET uses Fairchild Semiconductor’s advanced low voltage PowerTrench®. It has been optimized for battery power management applications.

Features
■ Max rDS(on) = 18mΩ at VGS = –4.5V, ID = –6A
■ Max rDS(on) = 22mΩ at VGS = –2.5V, ID = –5A
■ Max rDS(on) = 30mΩ at VGS = –1.8V, ID = –4A
■ Low gate charge
■ High performance trench technology for extremely low rDS(on)
■ Low profile TSSOP-8 package
■ RoHS compliant

Application
■ Power management
■ Load switch
■ Battery protection