NE552R679A datasheet pdf datenblatt - NEC - 3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS ::: ALLDATASHEET :::

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Shortcut : NE552R679A(3)

Datasheet

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Part No.	NE552R679A

Description	3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS

Download	NE552R679A Click to view

File Size	68.5 Kbytes / 9 Pages

Maker	NEC [NEC]

Homepage	http://www.necel.com/index.html

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Part Number	Components Description	Html View	Manufacturer
NE5510179A	3.5V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS	1 2 3 4	NEC
5510279A	3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS	1 2 3 4 5	NEC
NE5510279A	3.5V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS	1 2 3 4 5	NEC
2SB601	PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING	1 2 3 4 5 More	NEC
2SD2165	NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING	1 2 3 4 5	NEC
RD100HHF1	MOS FET type transistor specifically designed for HF High power amplifiers applications.	1 2 3 4 5 More	Mitsubishi Electric Semiconductor
2SD2217	NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING	1 2 3 4	NEC
2SB1628	PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING	1 2 3 4 5 More	NEC
BF543	Silicon N Channel MOS FET Triode For RF stages up to 300 MHz preferably in FM applications	1 2 3 4 5	Siemens Semiconductor Group
NE5511279A-T1	NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET	1 2 3	NEC

NE552R679A Datasheet	NE552R679A Cross Reference	NE552R679A Schematic	NE552R679A Distributor	NE552R679A Datenblatt	NE552R679A RoHS
NE552R679A Equivalent	NE552R679A Application Notes	NE552R679A Data Sheet	NE552R679A component	NE552R679A Fiche Technique	NE552R679A Circuit

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