RFM10N12 Datasheet(PDF) - GE Solid State

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RFM10N12 Datasheet (PDF) - GE Solid State

RFM10N12 Datasheet PDF - GE Solid State


Part #	RFM10N12

Download	RFM10N12 Download

File Size	211.91 Kbytes

Page	4 Pages

Manufacturer	GESS [GE Solid State]

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Description

N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS

RFM10N12 Datasheet (PDF)

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RFM10N12 Datasheet PDF - GE Solid State


Part #	RFM10N12

Download	RFM10N12 Click to download

File Size	211.91 Kbytes

Page	4 Pages

Manufacturer	GESS [GE Solid State]

Direct Link

Logo

Description	N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS

RFM10N12 Datasheet (HTML) - GE Solid State

RFM10N12 Datasheet HTML 1Page - GE Solid State

RFM10N12 Datasheet HTML 2Page - GE Solid State

RFM10N12 Datasheet HTML 3Page - GE Solid State

RFM10N12 Datasheet HTML 4Page - GE Solid State

RFM10N12 Product details

N-Channel Enhancement-Mode Power Field-Effect Transistors

Features
■ SOA is power-dissipation limited
■ Nanosecond switching speeds
■ Linear transfer characteristics
■ High input impedance
■ Majority carrier device

Similar Part No. - RFM10N12

Manufacturer	Part #	Datasheet	Description
New Jersey Semi-Conduct...	RFM10N12	89Kb / 2P	N-Channel Enhancement-Mode Power Field-Effect Transistors
New Jersey Semi-Conduct...	RFM10N12	89Kb / 2P	N-Channel Enhancement-Mode Power Field-Effect Transistors

Similar Description - RFM10N12

Manufacturer	Part #	Datasheet	Description
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